AN823
Vishay Siliconix
10 s (max)
255 ? 260 _ C
140 ? 170 _ C
1 X 4 _ C/s (max)
217 _ C
60 s (max)
3-6 _ C/s (max)
3 _ C/s (max)
60-120 s (min)
Reflow Zone
Pre-Heating Zone
Maximum peak temperature at 240 _ C is allowed.
FIGURE 3. Solder Reflow Temperature and Time Durations
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
On-Resistance vs. Junction Temperature
junction-to-case thermal resistance, R q jc , or the
junction-to-foot thermal resistance, R q jf . This parameter is
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted. Table 1 shows the thermal performance
of the TSOP-6.
TABLE 1.
Equivalent Steady State Performance—TSOP-6
Thermal Resistance R q jf 30 _ C/W
1.6
1.4
1.2
1.0
0.8
0.6
V GS = 4.5 V
I D = 6.1 A
? 50
? 25
0
25
50
75
100
125
150
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET r DS(on) with temperature (Figure 4).
www.vishay.com
2
T J ? Junction Temperature ( _ C)
FIGURE 4. Si3434DV
Document Number: 71743
27-Feb-04
相关PDF资料
SQ3427EEV-T1-GE3 MOSFET P-CH 60V 5.5A 6TSOP
SQ3456BEV-T1-GE3 MOSFET N-CH 30V 7.8A 6TSOP
SQ3460EV-T1-GE3 MOSFET N-CH 20V 8A 6TSOP
SQ4401DY-T1-GE3 MOSFET P-CH 40V 15.8A 8SOIC
SQ4410EY-T1-GE3 MOSFET N-CH D-S 30V 8SOIC
SQ4470EY-T1-GE3 MOSFET N-CH 60V 16A 8SOIC
SQ4840EY-T1-GE3 MOSFET N-CH D-S 40V 8SOIC
SQ4850EY-T1-GE3 MOSFET N-CH D-S 60V 8SOIC
相关代理商/技术参数
SQ3419EEV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive P-Channel 40 V (D-S) 175 °C MOSFET
SQ3419EEV-T1-GE3 功能描述:MOSFET 40V 7.4A 5W P-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQ3426EEV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 °C MOSFET
SQ3426EEV-T1-GE3 功能描述:MOSFET 60V 7A 5W N-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQ3427EEV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive P-Channel 60 V (D-S) 175 °C MOSFET
SQ3427EEV-T1-GE3 功能描述:MOSFET 60V 5.5A 5W P-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQ3442EV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 20 V (D-S) 175 °C MOSFET
SQ3442EV-T1-GE3 功能描述:MOSFET 20V 4.3A 1.7W N-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube